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1SS396

Part Number	1SS396
Manufacturer	Toshiba Semiconductor
Description	Silicon Diode
Published	Mar 23, 2005
Detailed Description	TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switching 1SS396 Unit: mm  Small ...
Datasheet	1SS396 PDF File

Overview

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switching 1SS396 Unit: mm  Small package  Low forward voltage  Low reverse current : SC-59 : VF (3) = 0.
54V (typ.
) : IR = 5μA (max.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 1* A Power dissipation P 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C JEDEC TO-236MOD Operating temperature range Topr −40 to 100 °C JEITA SC-59 Note: Using con...

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