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SMS318

SeCoS
Part Number SMS318
Manufacturer SeCoS
Description N-Channel MOSFET
Published Apr 2, 2016
Detailed Description Elektronische Bauelemente SMS318 220mA, 50V, RDS(ON) 3.5  N-Channel Enhancement MOSFET RoHS Compliant Product A suffi...
Datasheet PDF File SMS318 PDF File

SMS318
SMS318

Overview
Elektronische Bauelemente SMS318 220mA, 50V, RDS(ON) 3.
5  N-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage MECHANICAL DATA  Case: SOT-23  Case Material: Molded Plastic.
UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020C  Terminals: Solderable per MIL-STD-202, Method 208  Lead Free Plating(Matte Tin Finish Annealed over Alloy 42 leadframe)  Terminal Connections: See Diagram  Weight: 0.
008 grams (approximate) MARKING Product SMS318 Marking Code H03 / SS SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
04 2.
10 2.
80 1.
20 1.
60 0.
89 1.
40 1.
78 2.
04 0.
30 0.
50 REF.
G H J K L Millimeter Min.
Max.
- 0.
18 0.
40 0.
60 0.
08 0.
20 0.
6 REF.
0.
85 1.
15 PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7’ inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage Continuous Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range VDSS VGSS ID PD RθJA TJ, TSTG 50 ±20 220 350 357 150, -55~150 Unit V V mA mW °C/W °C http://www.
SeCoSGmbH.
com/ 27-Sep-2013 Rev.
E Any changes of specification will not be informed individually.
Page 1 of 3 Elektronische Bauelemente SMS318 220mA, 50V, RDS(ON) 3.
5  N-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min.
Typ.
Max.
Unit Teat Conditions Off Characteristics 2 Drain-Source Breakdown Voltage V(BR)DSS 50 - - V VGS = 0, ID = 250μA Gate-Body Leakage Current IGSS - - ±100 nA VGS=±20V, VDS =0 Zero Gate Voltage Drain Current Gate Threshold Voltage 1 Static Drain-Source On Resistance 1 Forward Transconductance 1 - - 0.
5 IDSS 100 On Characteristics...


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