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SMG2321P

SeCoS
Part Number SMG2321P
Manufacturer SeCoS
Description P-Channel MosFET
Published Apr 20, 2016
Detailed Description Elektronische Bauelemente SMG2321P -4.1A , -20V , RDS(ON) 79 m P-Channel Enhancement MOSFET RoHS Compliant Product A ...
Datasheet PDF File SMG2321P PDF File

SMG2321P
SMG2321P

Overview
Elektronische Bauelemente SMG2321P -4.
1A , -20V , RDS(ON) 79 m P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The miniature surface mount MOSFETs utilize high cell density process.
Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.
FEATURES  Low RDS(on) provides higher efficiency and extends battery life.
 Miniature SC-59 surface mount package saves board space.
 Fast switching speed.
 High performance trench technology.
 Low gate charge 7.
2Nc.
APPLICATION DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 7’ inch SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF.
A B C D E F Millimeter Min.
2.
70 2.
25 1.
30 Max.
3.
10 3.
00 1.
70 1.
00 1.
40 1.
70 2.
30 0.
35 0.
50 REF.
G H J K L Millimeter Min.
Max.
0.
10 REF.
0.
40 REF.
0.
10 0.
20 0.
45 0.
55 0.
85 1.
15    ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 TA=25°C TA=70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 TA=25°C TA=70°C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS PD TJ, TSTG Thermal Resistance Ratings Maximum Junction to Ambient 1 t≦5 sec Steady-State RθJA Notes: 1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
Ratings -20 ±8 -4.
1 -3.
3 ±10 ±0.
46 1.
25 0.
8 -55 ~ 150 100 150 Unit V V A A A W °C °C/W http://www.
SeCoSGmbH.
com/ 12-Apr-2011 Rev.
B Any changes of specification will not be informed individually.
Page 1 of 4 Elektronische Bauelemente SMG2321P -4.
1A , -20V , RDS(ON) 79 m P-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise sp...


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