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SMG2322N

SeCoS
Part Number SMG2322N
Manufacturer SeCoS
Description N-Channel MosFET
Published Apr 20, 2016
Detailed Description Elektronische Bauelemente SMG2322N 2.5A, 30V, RDS(ON) 85 m N-Channel Enhancement MOSFET RoHS Compliant Product A suff...
Datasheet PDF File SMG2322N PDF File

SMG2322N
SMG2322N

Overview
Elektronische Bauelemente SMG2322N 2.
5A, 30V, RDS(ON) 85 m N-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
FEATURES  Low RDS(on) provides higher efficiency and extends battery life.
 Low thermal impedance copper leadframe SC-59 saves board space.
 Fast switching speed.
 High performance trench technology.
APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION Package MPQ SC-59 3K LeaderSize 7’ inch SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF.
A B C D E F Millimeter Min.
2.
70 2.
25 1.
30 Max.
3.
10 3.
00 1.
70 1.
00 1.
40 1.
70 2.
30 0.
35 0.
50 REF.
G H J K L Millimeter Min.
Max.
0.
10 REF.
0.
40 REF.
0.
10 0.
20 0.
45 0.
55 0.
85 1.
15 ABSOLUTE MAXIMUM RATINGS(TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current 1 TA=25°C TA=70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 ID IDM IS Power Dissipation 1 TA=25°C TA=70°C PD Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance Rating Maximum Junction to Ambient 1 t≦5 sec Steady-State RθJA Notes: 1.
Surface Mounted on 1” x 1” FR4 Board.
2.
Pulse width limited by maximum junction temperature.
Rating 30 ±20 2.
5 2 10 0.
46 1.
25 0.
8 -55~150 150 200 Unit V V A A A W °C °C/W http://www.
SeCoSGmbH.
com/ 12-Apr-2011 Rev.
B Any changes of specification will not be informed individually.
Page 1 of 4 Elektronische Bauelemente SMG2322N 2.
5A, 30V, RDS(ON) 85 m N-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min.
Typ.
Max.
Unit Test Condition Gate-Thresho...


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