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SMG2325P

SeCoS
Part Number SMG2325P
Manufacturer SeCoS
Description P-Channel MosFET
Published Apr 20, 2016
Detailed Description Elektronische Bauelemente SMG2325P -3.6 A, -20 V, RDS(ON) 55 m P-Channel Enhancement Mode MOSFET RoHS Compliant Produ...
Datasheet PDF File SMG2325P PDF File

SMG2325P
SMG2325P

Overview
Elektronische Bauelemente SMG2325P -3.
6 A, -20 V, RDS(ON) 55 m P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printer , PCMCIA cards, cellular and cordless telephones.
FEATURES  Low RDS(on) provides higher efficiency and extends battery life.
 Low thermal impedance copper leadframe SC-59 saves board Space.
 Fast switching speed.
 High performance trench technology.
PACKAGE INFORMATION Package MPQ SC-59 3K LeaderSize 7’ inch SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF.
A B C D E F Millimeter Min.
2.
70 2.
25 1.
30 1.
00 Max.
3.
10 3.
00 1.
70 1.
40 1.
70 2.
30 0.
35 0.
50 REF.
G H J K L Millimeter Min.
Max.
0.
10 REF.
0.
40 REF.
0.
10 0.
20 0.
45 0.
55 0.
85 1.
15 1 3 2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 Operating Junction and Storage Temperature Range ID @ TA=25°C ID @ TA=70°C PD @ TA=25°C PD @ TA=70°C VDS VGS ID IDM IS PD Tj, Tstg Thermal Resistance Data Maximum Junction to Ambient 1 t ≦ 5 sec Steady State RJA Notes 1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
Ratings -20 ±12 -3.
6 -2.
9 -10 ±0.
46 1.
25 0.
8 -55 ~ 150 100 166 Unit V V A A A A W W °C °C / W http://www.
SeCoSGmbH.
com/ 05-Jan-2011 Rev.
A Any changes of specification will not be informed individually.
Page 1 of 4 Elektronische Bauelemente SMG2325P -3.
6 A, -20 V, RDS(ON) 55 m P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Param...


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