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SMG2326N

SeCoS
Part Number SMG2326N
Manufacturer SeCoS
Description N-Channel MosFET
Published Apr 20, 2016
Detailed Description Elektronische Bauelemente SMG2326N 2.2 A, 20 V, RDS(ON) 70 m N-Channel Enhancement MOSFET RoHS Compliant Product A su...
Datasheet PDF File SMG2326N PDF File

SMG2326N
SMG2326N

Overview
Elektronische Bauelemente SMG2326N 2.
2 A, 20 V, RDS(ON) 70 m N-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process.
Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.
FEATURES  Low RDS(on) provides higher efficiency and extends battery life.
 Miniature SC-59 surface mount Package saves board space.
SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J Application DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION Package MPQ SC-59 3K LeaderSize 7’ inch REF.
A B C D E F Millimeter Min.
2.
70 2.
25 1.
30 1.
00 Max.
3.
10 3.
00 1.
70 1.
40 1.
70 2.
30 0.
35 0.
50 REF.
G H J K L Millimeter Min.
Max.
0.
10 REF.
0.
40 REF.
0.
10 0.
20 0.
45 0.
55 0.
85 1.
15    ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 TA=25°C TA=70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 VDS VGS ID IDM IS 20 ±8 2.
2 1.
8 8 0.
6 Power Dissipation 1 TA=25°C TA=70°C Operating Junction and Storage Temperature Range PD TJ, TSTG 1.
25 0.
8 -55 ~ 150 Thermal Resistance Ratings Maximum Junction to Ambient 1 t≦5 sec Steady-State Notes: 1.
Surface Mounted on 1” x 1” FR4 Board.
2.
Pulse width limited by maximum junction temperature.
RθJA 100 166 Unit V V A A A W °C °C/W http://www.
SeCoSGmbH.
com/ 14-Feb-2011 Rev.
A Any changes of specification will not be informed individually.
Page 1 of 2 Elektronische Bauelemente SMG2326N 2.
2 A, 20 V, RDS(ON) 70 m N-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test conditions Gate-Threshold Voltage Gate-Bo...


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