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MT3S111

Silicon-Germanium NPN Epitaxial Planar Type Transistor

Description

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Features Low-Noise Figure: NF=0.9 dB (typ.) (@ f=1 GHz) High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) MT3S111 Unit: mm Marking R5 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Collector-emitter...

Toshiba Semiconductor

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