P-Channel MOSFET. P2003KV Datasheet

P2003KV MOSFET. Datasheet pdf. Equivalent

Part P2003KV
Description P-Channel MOSFET
Feature P2003KV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 22mΩ @VGS = -10.
Manufacture UNIKC
Datasheet
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P2003KV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P2003KV Datasheet
Recommendation Recommendation Datasheet P2003KV Datasheet





P2003KV
P2003KV
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
22mΩ @VGS = -10V
ID
-8A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-8
-6
-40
Avalanche Current
IAS -30
Avalanche Energy
L = 0.1mH
EAS
45
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2
1.28
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
62.5 °C / W
Ver 1.0
1 2012/4/13



P2003KV
P2003KV
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±25V
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 125 °C
VGS = -4.5V, ID = -7A
VGS = -10V, ID = -9A
VDS = -5V, ID = -9A
-30
-1.0 -1.5 -3
±100
-1
-10
29 34
20 22
20
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = -15V, f = 1MHz
Reverse Transfer Capacitance
Crss
1480
334
231
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
2.9
Total Gate Charge2
Gate-Source Charge2
Qg(VGS=-10V)
Qg(VGS=-
4.5V) Qgs
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -9A
30
15
5
Gate-Drain Charge2
Qgd
6
Turn-On Delay Time2
td(on)
13
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = -15V,
ID @ -9A, VGS = -10V, RGS = 6Ω
8
16
Fall Time2
tf
12
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -9A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -9A, dlF/dt = 100A / mS
40
26
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
-2
-1
UNIT
V
nA
mA
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/13





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