P-Channel MOSFET. P2003NV Datasheet

P2003NV MOSFET. Datasheet pdf. Equivalent

Part P2003NV
Description P-Channel MOSFET
Feature P2003NV N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 20mΩ @VGS =10V .
Manufacture UNIKC
Datasheet
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P2003NV N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P2003NV Datasheet
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P2003NV
P2003NV
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
30V
RDS(ON)
20mΩ @VGS =10V
-30V
25mΩ @VGS = -10V
ID
8.8A
-8A
Channel
N
P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30
VDS P -30
Gate-Source Voltage
N ±20
VGS P ±20
Continuous Drain Current
TA = 25 °C
TA = 70°C
N 8.8
P -8
ID N 7
P -6.4
Pulsed Drain Current1
N 35
IDM P -32
Avalanche Current
N 27
IAS P -28
Avalanche Energy
L = 0.1mH
N 38
EAS P 39
Power Dissipation
TA = 25 °C
TA = 70 °C
N
2.5
P
PD
N
1.6
P
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
REV 1.0
1 2014-5-12



P2003NV
P2003NV
N&P-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
50 °C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
CH.
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
VGS = 0V, ID = 250mA
VGS = 0V, ID = -250mA
VDS = VGS, ID = 250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
VDS = 0V, VGS = ±20V
N 30
P -30
N 1.7 2.3 3
P -1.7 -2.3 -3
N ±100
P ±100
VDS = 24V, VGS = 0V
N
1
Zero Gate Voltage Drain Current
IDSS
VDS = -24V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 55 °C
P
N
-1
10
VDS = -20V, VGS = 0V, TJ = 55 °C P
-10
On-State Drain Current1
ID(ON)
VDS = 5V, VGS = 10V
VDS = -5V, VGS = -10V
N 35
P -32
VGS = 4.5V, ID = 6A
N
19 40
Drain-Source On-State
Resistance1
RDS(ON)
VGS = -4.5V, ID = -7A
VGS = 10V, ID = 8A
P
N
34 70
13 20
VGS = -10V, ID = -8A
P
17 25
Forward Transconductance1
gfs
VDS = 10V, ID = 8A
VDS = -10V, ID = -8A
N
P
28
20
UNITS
V
nA
mA
A
S
REV 1.0
2 2014-5-12





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