DatasheetsPDF.com

STT3416 Datasheet, Equivalent, Effect Transistor.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor

 

 

 

Part STT3416
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Feature STT3416Green Product Sa mHop Microelect ronics C orp.
N-Channel Logic Level Enh ancement Mode Field Effect Transistor Ver 1.
0 PRODUCT SUMMARY VDSS 30V ID 7.
5A RDS(ON) (mΩ) Max 29 @ VGS=10V 42 @ VGS=4.
5V FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount Package.
G S STT SERIES SOT - 223 D G S ABSOLUTE M AXIMUM RATINGS (TA=25°C unless otherwi se noted) Symbol Parameter VDS Drain- Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TA=25 °C TA=70°C IDM -Pulsed a c EAS Sing le Pulse Avalanche Energy d PD Maximu m Power Dissipatio .
Manufacture SamHop Microelectronics
Datasheet
Download STT3416 Datasheet
Part STT3416
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Feature STT3416Green Product Sa mHop Microelect ronics C orp.
N-Channel Logic Level Enh ancement Mode Field Effect Transistor Ver 1.
0 PRODUCT SUMMARY VDSS 30V ID 7.
5A RDS(ON) (mΩ) Max 29 @ VGS=10V 42 @ VGS=4.
5V FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount Package.
G S STT SERIES SOT - 223 D G S ABSOLUTE M AXIMUM RATINGS (TA=25°C unless otherwi se noted) Symbol Parameter VDS Drain- Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TA=25 °C TA=70°C IDM -Pulsed a c EAS Sing le Pulse Avalanche Energy d PD Maximu m Power Dissipatio .
Manufacture SamHop Microelectronics
Datasheet
Download STT3416 Datasheet

STT3416

STT3416
STT3416

STT3416

Recommended third-party STT3416 Datasheet

 

 

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)