Mode MOSFET. SPN8852 Datasheet

SPN8852 MOSFET. Datasheet pdf. Equivalent

Part SPN8852
Description N-Channel Enhancement Mode MOSFET
Feature SPN8852 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8852 is the N-Channel logic enhancemen.
Manufacture SYNC POWER
Datasheet
Download SPN8852 Datasheet



SPN8852
SPN8852
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8852 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
APPLICATIONS
DC/DC Converter
Load Switch
Synchronous Buck Converter
SMPS Secondary Side Synchronous Rectifier
Power Tool
Motor Control
FEATURES
150V/4.1A,RDS(ON)=88m@VGS=10V
150V/2A,RDS(ON)=100m@VGS=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
PPAK5x6-8L package design
PIN CONFIGURATION(PPAK5x68L)
PART MARKING
2017/6/30 Ver 1
Page 1



SPN8852
SPN8852
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
7
8
Symbol
S
S
S
G
D
D
D
D
Description
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
ORDERINGINFORMATION
Part Number
Package
SPN8852DN8RGB
PPAK5x6-8L
SPN4852S8RGB : 13” Tape Reel ; Pb Free ; Halogen Free
ABSOULTE MAXIMUM RATINGS
(TA=25Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current(TJ=150)
TA=25
Pulsed Drain Current
Avalanche Energy, Single Pulse (L=0.1mH , Tc=25)
Power Dissipation
TC=25
TA=25
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient (steady state)
Symbol
VDSS
VGSS
ID
IDM
EAS
PD
TJ
TSTG
RθJc
RθJA
Part Marking
SPN8852
Typical
150
±20
4.1
20
40
5.0
2.5
-55/150
-55/150
25
50
Unit
V
V
A
A
mJ
W
/W
2017/6/30 Ver 1
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