Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
Description
3SK317
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
ADE-208-778 (Z) 1st. Edition Mar. 1999 Features
Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) High power gain characteristics ; (PG = 27.6 dB typ. at f = 200 MHz)
Outline
CMPAK-4
2 3 1 4
1. Source 2. Gate1 3. Gate2 4. Drain
Note: Marking is “ZR-”.
3SK317
Absolute Maxim...
