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3SK322

Silicon N-Channel Dual Gate MOS FET

Description

3SK322 Silicon N-Channel Dual Gate MOS FET ADE-208-712A (Z) 2nd. Edition Dec. 1998 Application UHF / VHF RF amplifier Features Low noise figure. NF = 1.0 dB typ. at f = 200 MHz Capable of low voltage operation Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline 3SK322 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to...

Hitachi Semiconductor

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