4N35 730A-04 Datasheet

4N35 Datasheet, PDF, Equivalent


Part Number

4N35

Description

STANDARD THRU HOLE CASE 730A-04

Manufacture

Motorola Inc

Total Page 6 Pages
Datasheet
Download 4N35 Datasheet


4N35
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
GlobalOptoisolator
6-Pin DIP Optoisolators
Transistor Output
The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon phototransistor detector.
Current Transfer Ratio — 100% Minimum @ Specified Conditions
Guaranteed Switching Speeds
Meets or Exceeds all JEDEC Registered Specifications
To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Applications
General Purpose Switching Circuits
Interfacing and coupling systems of different potentials and impedances
Regulation Feedback Circuits
Monitor & Detection Circuits
Solid State Relays
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
INPUT LED
Reverse Voltage
Forward Current — Continuous
LED Power Dissipation @ TA = 25°C
with Negligible Power in Output Detector
Derate above 25°C
VR 6 Volts
IF 60 mA
PD 120 mW
1.41 mW/°C
OUTPUT TRANSISTOR
Collector–Emitter Voltage
Emitter–Base Voltage
Collector–Base Voltage
Collector Current — Continuous
Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LED
Derate above 25°C
VCEO
VEBO
VCBO
IC
PD
30 Volts
7 Volts
70 Volts
150 mA
150 mW
1.76 mW/°C
TOTAL DEVICE
Isolation Source Voltage(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
VISO
7500
Vac(pk)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
PD 250 mW
2.94 mW/°C
Ambient Operating Temperature Range(2)
Storage Temperature Range(2)
TA – 55 to +100
Tstg – 55 to +150
°C
°C
Soldering Temperature (10 sec, 1/16from case)
TL 260 °C
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred devices are Motorola recommended choices for future use and best overall value.
GlobalOptoisolator is a trademark of Motorola, Inc.
REV 2
©MMoottoorroolal,aInOc.p1t9o9e5lectronics Device Data
Order this document
by 4N35/D
4N35*
4N36
4N37
[CTR = 100% Min]
*Motorola Preferred Device
STYLE 1 PLASTIC
61
STANDARD THRU HOLE
CASE 730A–04
SCHEMATIC
16
25
34
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
1

4N35
4N35 4N36 4N37
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Characteristic
Symbol
Min
INPUT LED
Forward Voltage (IF = 10 mA)
Reverse Leakage Current (VR = 6 V)
Capacitance (V = 0 V, f = 1 MHz)
OUTPUT TRANSISTOR
TA = 25°C
TA = –55°C
TA = 100°C
VF
IR
CJ
0.8
0.9
0.7
Collector–Emitter Dark Current (VCE = 10 V, TA = 25°C)
Collector–Emitter Dark Current (VCE = 30 V, TA = 100°C)
ICEO
Collector–Base Dark Current (VCB = 10 V)
TA = 25°C
TA = 100°C
ICBO
Collector–Emitter Breakdown Voltage (IC = 1 mA)
V(BR)CEO
30
Collector–Base Breakdown Voltage (IC = 100 µA)
V(BR)CBO
70
Emitter–Base Breakdown Voltage (IE = 100 µA)
V(BR)EBO
7
DC Current Gain (IC = 2 mA, VCE = 5 V)
hFE —
Collector–Emitter Capacitance (f = 1 MHz, VCE = 0)
CCE
Collector–Base Capacitance (f = 1 MHz, VCB = 0)
CCB
Emitter–Base Capacitance (f = 1 MHz, VEB = 0)
CEB
COUPLED
Output Collector Current
(IF = 10 mA, VCE = 10 V)
TA = 25°C
TA = –55°C
TA = 100°C
IC (CTR)(2)
10 (100)
4 (40)
4 (40)
Collector–Emitter Saturation Voltage (IC = 0.5 mA, IF = 10 mA)
VCE(sat)
Turn–On Time
ton —
Turn–Off Time
Rise Time
(IC = 2 mA, VCC = 10 V,
RL = 100 )(3)
toff —
tr —
Fall Time
tf —
Isolation Voltage (f = 60 Hz, t = 1 sec)
Isolation Current(4) (VI–O = 3550 Vpk)
Isolation Current (VI–O = 2500 Vpk)
Isolation Current (VI–O = 1500 Vpk)
Isolation Resistance (V = 500 V)(4)
Isolation Capacitance (V = 0 V, f = 1 MHz)(4)
4N35
4N36
4N37
VISO
IISO
RISO
CISO
7500
1011
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. For test circuit setup and waveforms, refer to Figure 11.
4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
Typ(1)
1.15
1.3
1.05
18
1
0.2
100
45
100
7.8
400
7
19
9
30 (300)
0.14
7.5
5.7
3.2
4.7
8
0.2
Max Unit
1.5 V
1.7
1.4
10 µA
— pF
50 nA
500 µA
20 nA
—V
—V
—V
——
— pF
— pF
— pF
— mA (%)
0.3 V
10 µs
10
— Vac(pk)
100 µA
100
100
2 pF
2 Motorola Optoelectronics Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 4N35/D GlobalOp toisolator™ 6-Pin DIP Optoisolators Transistor Output The 4N35, 4N36 and 4N 37 devices consist of a gallium arsenid e infrared emitting diode optically cou pled to a monolithic silicon phototrans istor detector. • Current Transfer Ra tio — 100% Minimum @ Specified Condit ions • Guaranteed Switching Speeds Meets or Exceeds all JEDEC Registered Specifications • To order devices th at are tested and marked per VDE 0884 r equirements, the suffix ”V” must be included at end of part number. VDE 08 84 is a test option. Applications • G eneral Purpose Switching Circuits • I nterfacing and coupling systems of diff erent potentials and impedances • Reg ulation Feedback Circuits • Monitor & Detection Circuits • Solid State Rel ays MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating INPUT LED Rever se Voltage Forward Current — Continuo us LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 2.
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