4N35 Optocoupler Datasheet

4N35 Datasheet, PDF, Equivalent


Part Number

4N35

Description

Optocoupler

Manufacture

Vishay Telefunken

Total Page 7 Pages
Datasheet
Download 4N35 Datasheet


4N35
4N35, 4N36, 4N37
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
A1
C2
NC 3
6B
5C
4E
21842
i179004-5
DESCRIPTION
Each optocoupler consists of gallium arsenide infrared LED
and a silicon NPN phototransistor.
AGENCY APPROVALS
• Underwriters laboratory file no. E52744
• BSI: EN 60065:2002, EN 60950:2000
• FIMKO; EN 60065, EN 60335, EN 60950 certificate no. 25156
ORDER INFORMATION
PART
4N35
4N36
4N37
FEATURES
• Isolation test voltage 5000 VRMS
• Interfaces with common logic families
• Input-output coupling capacitance < 0.5 pF
• Industry standard dual-in-line 6 pin package
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• AC mains detection
• Reed relay driving
• Switch mode power supply feedback
• Telephone ring detection
• Logic ground isolation
• Logic coupling with high frequency noise rejection
REMARKS
CTR > 100 %, DIP-6
CTR > 100 %, DIP-6
CTR > 100 %, DIP-6
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
INPUT
Reverse voltage
Forward current
Surge current
t 10 μs
Power dissipation
OUTPUT
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector current
Power dissipation
COUPLER
Isolation test voltage
Creepage
Clearance
Isolation thickness between emitter
and detector
t 1 ms
SYMBOL
VR
IF
IFSM
Pdiss
VCEO
VEBO
IC
IC
Pdiss
VISO
VALUE
6
50
1
70
70
7
50
100
70
5000
7
7
0.4
UNIT
V
mA
A
mW
V
V
mA
mA
mW
VRMS
mm
mm
mm
Document Number: 81181
Rev. 1.2, 07-Jan-10
For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
153

4N35
4N35, 4N36, 4N37
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
COUPLER
Comparative tracking index
Isolation resistance
Storage temperature
Operating temperature
Junction temperature
Soldering temperature (2)
DIN IEC 112/VDE 0303, part 1
VIO = 500 V, Tamb = 25 °C
VIO = 500 V, Tamb = 100 °C
max.10 s dip soldering:
distance to seating plane
1.5 mm
RIO
RIO
Tstg
Tamb
Tj
Tsld
175
1012
1011
- 55 to + 150
- 55 to + 100
100
260
Ω
Ω
°C
°C
°C
°C
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering condditions for through hole devices (DIP).
ELECTRICAL CHARACTERISTICS (1)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
TYP.
MAX.
UNIT
INPUT
Junction capacitance
Forward voltage (2)
Reverse current (2)
Capacitance
OUTPUT
VR = 0 V, f = 1 MHz
IF = 10 mA
IF = 10 mA, Tamb = - 55 °C
VR = 6 V
VR = 0 V, f = 1 MHz
Cj 50 pF
VF
1.3 1.5
V
VF 0.9 1.3 1.7 V
IR 0.1 10 μA
CO 25 pF
Collector emitter breakdown
voltage(2)
Emitter collector breakdown
voltage(2)
IC = 1 mA
IE = 100 μA
4N35
4N36
4N37
BVCEO
BVCEO
BVCEO
BVECO
30
30
30
7
V
V
V
V
OUTPUT
Collector base breakdown
voltage (2)
IC = 100 μA, IB = 1 μA
4N35
4N36
4N37
BVCBO
BVCBO
BVCBO
70
70
70
V
V
V
VCE = 10 V, IF = 0
4N35
4N36
ICEO
ICEO
5 50 nA
5 50 nA
Collector emitter leakage current (2)
VCE = 10 V, IF = 0
VCE = 30 V, IF = 0,
Tamb = 100 °C
4N37
4N35
4N36
4N37
ICEO
ICEO
ICEO
ICEO
5 50 nA
500 μA
500 μA
500 μA
Collector emitter capacitance
VCE = 0
CCE 6 pF
COUPLER
Resistance, input output (2)
VIO = 500 V
RIO 1011
Ω
Capacitance, input output
f = 1 MHz
CIO 0.6 pF
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(2) Indicates JEDEC registered value.
www.vishay.com
154
For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 81181
Rev. 1.2, 07-Jan-10


Features 4N35, 4N36, 4N37 Vishay Semiconductors O ptocoupler, Phototransistor Output, wit h Base Connection A1 C2 NC 3 6B 5C 4E 21842 i179004-5 DESCRIPTION Each opt ocoupler consists of gallium arsenide i nfrared LED and a silicon NPN phototran sistor. AGENCY APPROVALS • Underwrite rs laboratory file no. E52744 • BSI: EN 60065:2002, EN 60950:2000 • FIMKO; EN 60065, EN 60335, EN 60950 certifica te no. 25156 ORDER INFORMATION PART 4N 35 4N36 4N37 FEATURES • Isolation te st voltage 5000 VRMS • Interfaces wit h common logic families • Input-outpu t coupling capacitance < 0.5 pF • Ind ustry standard dual-in-line 6 pin packa ge • Compliant to RoHS directive 2002 /95/EC and in accordance to WEEE 2002/9 6/EC APPLICATIONS • AC mains detectio n • Reed relay driving • Switch mod e power supply feedback • Telephone r ing detection • Logic ground isolatio n • Logic coupling with high frequenc y noise rejection REMARKS CTR > 100 %, DIP-6 CTR > 100 %, DIP-6 CTR > 100 %, DIP-6 ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST .
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