DIP Optocoupler. 4N28 Datasheet

4N28 Optocoupler. Datasheet pdf. Equivalent

Part 4N28
Description (4N25 - 4N28) Industry Standard Single Channel 6 Pin DIP Optocoupler
Feature PHOTOTRANSISTOR Industry Standard Single Channel 6 Pin DIP Optocoupler DEVICE TYPES Part No. CTR % M.
Manufacture Infineon Technologies
Datasheet
Download 4N28 Datasheet



4N28
DEVICE TYPES
Part No. CTR % Min.
4N25
20
4N26
20
4N27
10
4N28
10
4N35
100
4N36
100
www.DataSh4eNet347U.com 100
4N38
10
H11A1 50
H11A2 20
H11A3 20
H11A4 10
H11A5 30
Part No.
MCT2
MCT2E
MCT270
MCT271
MCT272
MCT273
MCT274
MCT275
MCT276
MCT277
CTR % Min.
20
20
50
4590
75150
125250
225400
7090
1560
100
FEATURES
• Interfaces with Common Logic Families
• Input-output Coupling Capacitance < 0.5 pF
• Industry Standard Dual-in-line 6-pin Package
• Field Effect Stable by TRIOS®
• 5300 VRMS Isolation Test Voltage
• Underwriters Laboratory File #E52744
V
DE
VDE #0884 Approval Available with Option 1
APPLICATIONS
• AC Mains Detection
• Reed Relay Driving
• Switch Mode Power Supply Feedback
• Telephone Ring Detection
• Logic Ground Isolation
• Logic Coupling with High Frequency Noise
Rejection
Notes:
Designing with data sheet is covered in Application Note 45.
PHOTOTRANSISTOR
Industry Standard
Single Channel
6 Pin DIP Optocoupler
Dimensions in Inches (mm)
321
pin one ID
.248 (6.30)
.256 (6.50)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
Anode 1
Cathode 2
4 56
.335 (8.50)
.343 (8.70)
NC 3
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
.031 (0.80) min. 3°9°
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
6 Base
5 Collector
4 Emitter
.300 (7.62)
typ.
18°
.010 (.25)
typ.
.300.347
(7.628.81)
.114 (2.90)
.130 (3.0)
DESCRIPTION
This data sheet presents five families of Infineon Industry Standard
Single Channel Phototransistor Couplers. These families include the
4N25/26/27/28 types, the 4N35/36/37/38 couplers, the H11A1/A2/
A3/A4/A5, the MCT2/2E, and MCT270/271/272/273/274/275/276/
277 devices.Each optocoupler consists of Gallium Arsenide infra-
red LED and a silicon NPN phototransistor.
These couplers are Underwriters Laboratories (UL) listed to comply
with a 5300 VRMS Isolation Test Voltage. This isolation performance
is accomplished through Infineon double molding isolation manu-
facturing process. Compliance to VDE 0884 partial discharge isola-
tion specification is available for these families by ordering option 1.
Phototransistor gain stability, in the presence of high isolation volt-
ages, is insured by incorporating a TRansparent lOn Shield
(TRIOS)® on the phototransistor substrate. These isolation pro-
cesses and the Infineon IS09001 Quality program results in the
highest isolation performance available for a commercial plastic
phototransistor optocoupler.
The devices are available in lead formed configuration suitable for
surface mounting and are available either on tape and reel, or in
standard tube shipping containers.
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–53
March 27, 2000-00



4N28
Maximum Ratings TA=25°C
Emitter
Reverse Voltage .......................................................................................... 6.0 V
Forward Current ........................................................................................ 60 mA
Surge Current (t10 µs)............................................................................... 2.5 A
Power Dissipation................................................................................... 100 mW
Detector
Collector-Emitter Breakdown Voltage........................................................... 70 V
Emitter-Base Breakdown Voltage ................................................................ 7.0 V
Collector Current ....................................................................................... 50 mA
Collector Current(t <1.0 ms).................................................................... 100 mA
Power Dissipation................................................................................... 150 mW
Package
Isolation Test Voltage.......................................................................... 5300 VRMS
Creepage .............................................................................................. 7.0 mm
Clearance ............................................................................................. 7.0 mm
Isolation Thickness between Emitter and Detector ............................... 0.4 mm
www.DataShCeeotm4Up.acroamtive Tracking Index per DIN IEC 112/VDE0303, part 1 .................. 175
Isolation Resistance
VIO=500 V, TA=25°C...............................................................................1012
VIO=500 V, TA=100°C............................................................................ 1011
Storage Temperature................................................................ 55°C to +150°C
Operating Temperature ............................................................ 55°C to +100°C
Junction Temperature................................................................................ 100°C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane 1.5 mm) ...................................................... 260°C
4N25/26/27/28—Characteristics TA=25°C
Emitter
Symbol Min. Typ.
Forward Voltage*
Reverse Current*
Capacitance
Detector
VF 1.3
IR 0.1
CO 25
Breakdown Voltage*
ICEO(dark)*
Collector-Emitter BVCEO 30
Emitter-Collector BVECO
7.0
Collector-Base
BVCBO 70
4N25/26/27
4N28
5.0
10
ICBO(dark)*
Capacitance, Collector-Emitter
Package
DC Current Transfer Ratio*
4N25/26
4N27/28
CCE
CTR
2.0
6.0
20 50
10 30
Isolation Voltage*
4N25
4N26/27
VIO 2500
1500
4N28
500
Saturation Voltage, Collector-Emitter
Resistance, Input to Output*
Coupling Capacitance
Rise and Fall Times
VCE(sat)
RIO 100
CIO 0.5
tr, tf 2.0
* Indicates JEDEC registered values
2001 Inneon Technologies Corp. Optoelectronics Division San Jose, CA
www.inneon.com/opto 1-888-Inneon (1-888-463-4636)
254
Max.
1.5
100
Unit
V
µA
pF
V
50 nA
100
20 nA
pF
%
V
0.5 V
G
pF
µs
Condition
IF=50 mA
VR=3.0 V
VR=0
IC=1.0 mA
IE=100 µA
IC=100 µA
VCE=10 V, (base open)
VCB=10 V, (emitter open)
VCE=0
VCE=10 V, IF=10 mA
Peak, 60 Hz
ICE=2.0 mA, IF=50 mA
VIO=500 V
f=1.0 MHz
IF=10 mA
VCE=10 V, RL=100
Phototransistor, Industry Standard
March 27, 2000-00







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