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TPC8082

MOSFETs

Description

TPC8082 MOSFETs Silicon N-Channel MOS (U-MOS) TPC8082 1. Applications Notebook PCs Mobile Handsets 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0...

Toshiba Semiconductor

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