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1SS301

Toshiba Semiconductor

Diode


Description
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 1SS301 Ultra High Speed Switching Applications z Small package : SC-70 z Low forward voltage : VF (3) = 0.9 V (typ.) z Fast reverse recovery time : trr = 1.6 ns (typ.) z Small total capacitance : CT = 0.9 pF (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit ...



Toshiba Semiconductor

1SS301

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