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1SS362

Toshiba Semiconductor

Diode


Description
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application z Small package z Low forward voltage : VF(3) = 0.97 V (typ.) z Fast reverse recovery time : trr = 1.6 ns (typ.) z Small total capacitance : CT = 0.5 pF (typ.) 1SS362 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (p...



Toshiba Semiconductor

1SS362

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