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1SS395

Toshiba Semiconductor

Silicon Diode


Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application 1SS395 Unit: mm z Small package z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current ...



Toshiba Semiconductor

1SS395

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