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MT3S113

Toshiba Semiconductor
Part Number MT3S113
Manufacturer Toshiba Semiconductor
Description Silicon-Germanium NPN Epitaxial Planar Type Transistor
Published Jun 14, 2016
Detailed Description TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 MT3S113 VHF-UHF Band Low-Noise, Low-Distortion ...
Datasheet PDF File MT3S113 PDF File

MT3S113
MT3S113

Overview
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.
15dB(Typ.
) (@ f=1GHz) • High Gain:|S21e|2=11.
8dB(Typ.
) (@ f=1GHz) Marking R7 1.
Base 2.
Emitter 3.
Collector Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit S-Mini JEDEC TO-236 JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.
012 g (typ.
) Collector-emitter voltage VCES Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector-current IC Base-current IB Collector power dissipation PC(Note1) Junction temperature Tj Storage temperature range Tstg Note1:The device is mounted on a ceramic board 13 V 5.
3 V 0.
6 V 100 mA 10 mA 800 mW 150 °C −55 to 150 °C (25.
4 mm x 25.
4 mm x 0.
8 mm (t)) Note2: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2009-12-01 Microwave Characteristics (Ta = 25°C) MT3S113 Characteristics Symbol Test Condition Transition frequency Insertion gain Noise figure 3rd order intermodulation distortion output intercept point fT |S21e|2(1) |S21e|2(2) NF(1) NF(2) OIP3 VCE=5V,IC=50mA VCE=5V,IC=50mA,f=500MHz VCE=5V,IC=50mA,f=1GHz VCE=5V,IC=50mA,f=500MHz VCE=5V,IC=50mA,f=1GHz VCE=5V,IC=50mA,f=500MHz, ⊿f=1MHz Min Typ Max Unit 10.
5 12.
5 ⎯ GHz ⎯ 17.
5 ⎯ dB 9.
5 11.
8 ⎯ dB ⎯ 0.
91 ⎯ dB ⎯ 1.
15 1.
45 dB 32 35.
9 ⎯ dBmW Electrical Characteristics (Ta = 25°C) Characteristi...


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