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4N10

Part Number	4N10
Manufacturer	Inchange Semiconductor
Description	N-Channel MOSFET Transistor
Published	Jul 11, 2016
Detailed Description	isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Stati...
Datasheet	4N10 PDF File

Overview

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
8Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 4 A IDM Drain Current-Single Plused 16 A PD Total Dissipation @TC=25℃ 20 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature ·THERMAL CHA...

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