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4N70

Part Number	4N70
Manufacturer	Inchange Semiconductor
Description	N-Channel MOSFET Transistor
Published	Jul 11, 2016
Detailed Description	isc N-Channel Mosfet Transistor 4N70 ·FEATURES ·Low RDS(on) = 2.5Ω(MAX) ·Improved Gate Charge ·Fast Switching Speed ·M...
Datasheet	4N70 PDF File

Overview

isc N-Channel Mosfet Transistor 4N70 ·FEATURES ·Low RDS(on) = 2.
5Ω(MAX) ·Improved Gate Charge ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching mode power supplies ·DC-DC & DC-AC converter ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 700 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 4 A IDM Drain Current-Single Plused 16 A Ptot Total Dissipation@TC=25℃ 36 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Ther...

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