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BLF2045

NXP
Part Number BLF2045
Manufacturer NXP
Description UHF power LDMOS transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF2045 UHF power LDMOS transistor Preliminary specification 1999 Dec 06 P...
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BLF2045
BLF2045


Overview
DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF2045 UHF power LDMOS transistor Preliminary specification 1999 Dec 06 Philips Semiconductors Preliminary specification UHF power LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation.
APPLICATIONS • Communication transmitter applications (PCN/PCS) in the 1.
8 to 2.
2 GHz frequency range.
3 BLF2045 PINNING - SOT467C PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 1 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap.
The common source is connected to the mounting flange.
2 Top view MBK584 Fig.
1 Simplified outline.
QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION 2-tone, class-AB f (MHz) f1 = 2000; f2 = 2000.
1 VDS (V) 26 PL (W) 30 (PEP) Gp (dB) >10 ηD (%) >30 dim (dBc) ≤−25 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VDS VGS ID Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) storage temperature junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.
For further information, refer to Philips specs.
: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
CONDITIONS − − − −65 − MIN.
MAX.
65 ±15 4.
5 150 200 V V A °C °C UNIT 1999 Dec 06 2 Philips Semiconductors Preliminary specification UHF power LDMOS transistor THERMAL CHARACTERISTICS SYMBOL Rth j-h Note 1.
Thermal resistance is determined under specified RF operating conditions.
CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon Cis Cos Crs PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current drain cut-off ...


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