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3SK309

Hitachi Semiconductor
Part Number 3SK309
Manufacturer Hitachi Semiconductor
Description GaAs N Channel Dual Gate MES FET UHF RF Amplifier
Published Mar 30, 2005
Detailed Description 3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier ADE-208-472 A 2nd. Edition Features • Capable of low voltage o...
Datasheet PDF File 3SK309 PDF File

3SK309
3SK309

Overview
3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier ADE-208-472 A 2nd.
Edition Features • Capable of low voltage operation (VDS = 1.
5 to 3 V) • Excellent low noise characteristics (NF = 1.
25 dB typ.
at f = 900 MHz) • High power gain (PG = 21.
0 dB typ.
at f = 900 MHz) Outline CMPAK–4 2 3 4 1 1.
Source 2.
Gate1 3.
Gate2 4.
Drain 3SK309 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 –4 –4 18 100 125 –55 to +125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Gate 1 to cutof...


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