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3SK319

Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

Description

3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602(Z) 1st. Edition February 1998 Features Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) Excellent cross modulation characteristics Capable low voltage operation; +B= 5V Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: Marking is “YB–”. 3SK319 Absolu...

Hitachi Semiconductor

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