DatasheetsPDF.com

NDS9959

Fairchild
Part Number NDS9959
Manufacturer Fairchild
Description Dual N-Channel MOSFET
Published May 12, 2005
Detailed Description February 1996 NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enha...
Datasheet PDF File NDS9959 PDF File

NDS9959
NDS9959


Overview
February 1996 NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Features 2.
0A, 50V.
RDS(ON) = 0.
3Ω @ VGS = 10V High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.
Dual MOSFET in surface mount package.
_________________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage T A = 25°C unless otherwise noted NDS9959 50 ± 20 (Note 1a) (Note 1a) Units V V A Drain Current - Continuous @ TA = 25°C - Continuous @ TA = 70°C - Pulsed @ TA = 25°C ± 2.
0 ± 1.
6 ±8 2 PD Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) W 1.
6 1 0.
9 -55 to 150 °C TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W © 1997 Fairchild Semiconductor Corporation NDS9959.
SAM Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) ID(on) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Conditions VGS = 0 V, ID = 250 µA VDS = 40 V, VGS = 0 V TJ= 55°C Gate - Body Leakage, Forward Gate - Body Leakage...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)