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HAT1035R

Renesas Technology
Part Number HAT1035R
Manufacturer Renesas Technology
Description Silicon P-Channel Power MOSFET
Published Nov 20, 2008
Detailed Description HAT1035R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of –4 V gate...
Datasheet PDF File HAT1035R PDF File

HAT1035R
HAT1035R

Overview
HAT1035R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of –4 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 78 56 DD DD 8 7 65 2 4 1 234 G G S1 MOS1 S3 MOS2 REJ03G0845-0100 Rev.
1.
00 Apr.
22,2005 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to Source voltage VDSS –150 Gate to Source voltage VGSS ±15 Drain current Drain peak current ID ID(pulse)Note1 –0.
25 –1 Body-Drain diode reverse Drain current Channel dissipation Channel dissipation IDR Pch Note2 Pch Note3 –0.
25 1 1.
5 Channel...


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