Field Effect Transistor
Description
TPCC8093
MOSFETs Silicon N-Channel MOS (U-MOS)
TPCC8093
1. Applications
Lithium-Ion Secondary Batteries
2. Features
(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 4.5 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID...
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