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1SS368

Toshiba Semiconductor

Diode


Description
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS368 Ultra High Speed Switching Application Small package Low forward voltage : VF (3) = 0.98V (typ.) Fast reverse recovery time: trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF (typ.) 1SS368 Unit in mm Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Maximum (peak) reverse voltage VRM...



Toshiba Semiconductor

1SS368

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