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1SS389

Part Number	1SS389
Manufacturer	Toshiba Semiconductor
Description	Silicon Diode
Published	Mar 23, 2005
Detailed Description	TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application 1SS389 Unit: mm z Small ...
Datasheet	1SS389 PDF File

Overview

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application 1SS389 Unit: mm z Small package z Low forward voltage: VF = 0.
23V (typ.
) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFSM P* 15 V 10 V 200 mA 100 mA 1A 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 100 °C JEDEC ― Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage ...

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