Silicon Diode
Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS393
High Speed Switching Application
1SS393
Unit: mm
z Low forward voltage z Low reverse current z Small package
: VF (3) = 0.54V (typ.) : IR = 5μA (max) : SC-70
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
45 V
Reverse voltage
V...
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