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1SS397

Toshiba Semiconductor
Part Number 1SS397
Manufacturer Toshiba Semiconductor
Description Silicon Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching Applications 1SS397 Unit: mm  ...
Datasheet PDF File 1SS397 PDF File

1SS397
1SS397

Overview
TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching Applications 1SS397 Unit: mm  Small package : SC-70  Low forward voltage : VF = 1.
0V (typ.
)  High voltage : VR = 400V (min)  Fast reverse recovery time : trr = 0.
5μs (typ.
)  Small total capacitance : CT = 2.
5pF (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 420 V Reverse voltage VR 400 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Surge current (10ms) IFSM 2A Power dissipation Junction temperature P 100 mW JEDEC Tj 125 °C JEITA ― SC-70 Storage temperature range Tstg −55 t...


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