Silicon Diode
Description
TOSHIBA Diode Silicon Epitaxial Planar Diode
1SS398
High-Voltage, High-Speed Switching Applications
1SS398
Unit: mm
Small package
: SC-59
Low forward voltage
: VF = 1.0 V (typ.) @ IF = 100 mA
Fast reverse recovery time : trr = 0.5 μs (typ.)
Small total capacitance : CT = 2.5 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symb...
Toshiba Semiconductor
1SS398 PDF File
Similar Datasheet