| Part Number | TPC8204 |
| Manufacturer | Toshiba Semiconductor |
| Title | Field Effect Transistor |
| Description | TPC8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) TPC8204 Lithium Ion Battery Applications Portable Equipment Applicat... |
| Features |
(Note 1) Single-device operation (Note 3a)
Weight: 0.080 g (typ.)
Circuit Configuration
PD (1) 0.75 W PD (2) EAS IAR EAR Tch Tstg 0.45
46.8 6 0.1 150 −55~150
mJ A mJ °C °C
Repetitive avalanche energy Single-device value at operation (Note 2a, Note 3b, Note 5) Channel temperature Storage temper...
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| File Size | 335.76KB |
| Datasheet |
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TPC8201 : TPC8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) TPC8201 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l Low drain−source ON resistance l High forward transfer admittance l Low leakage current l Enhancement−mode : RDS (ON) = 37 mΩ (typ.) : |Yfs| = 6 S (typ.) Unit: mm : IDSS = 10 µA (max) (VDS = 30 V) : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20kΩ) Gate-source voltage Drain curren DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 30 30 ±20 5 20 1.5 W PD(2) 1.1 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-6J1E Single-device o.
TPC8202 : TPC8202 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) TPC8202 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l 2.5-V Gate drive l Small footprint due to small and thin package l Low drain−source ON resistance l Low leakage current l Enhancement−mode : RDS (ON) = 41 mΩ (typ.) l High forward transfer admittance : |Yfs| = 9 S (typ.) : IDSS = 10 µA (max) (VDS = 20 V) : Vth = 0.5~1.1 V (VDS = 10 V, ID = 200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20kΩ) Gate-source voltage Drain curren DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 20 20 ±12 5 20 1.5 W PD(2.
TPC8203 : TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain−source ON resistance Low leakage current Enhancement−mode : RDS (ON) = 14 mΩ (typ.) High forward transfer admittance : |Yfs| = 8 S (typ.) : IDSS = 10 µA (max) (VDS = 30 V) : Vth = 0.8~2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD 2) EAS IAR EAR Tch Tstg Rating 30 30 ±20 6 2.
TPC8205 : TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8205 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l l l l l Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 30 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20kΩ) Gate-source voltage Drain curren DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 20 20 ±12 5 20 1.1 W PD(2) 0.5 Unit V V V A .
TPC8206 : TPC8206 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8206 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications · · · · · Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 40 mΩ (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement-mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) DC Pulse (N.
TPC8207 : TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8207 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) DC Pulse (No.
TPC8208 : TPC8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8208 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm · Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) · High forward transfer admittance: |Yfs| = 6.3 S (typ.) · Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) · Enhancement-mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Drain power dissipation (t = 10 s) (Note.
TPC8209 : TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS II) TPC8209 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications l l l l l Small footprint due to small and thin package Low drain−source ON resistance: RDS (ON) = 30 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement−mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 30 30 ±20 5 20 1.5 W PD(2) 1.1 .