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TPC8203

Toshiba Semiconductor
Part Number TPC8203
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Apr 16, 2005
Detailed Description TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) TPC8203 Lithium Ion Battery Applications P...
Datasheet PDF File TPC8203 PDF File

TPC8203
TPC8203


Overview
TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain−source ON resistance Low leakage current Enhancement−mode : RDS (ON) = 14 mΩ (typ.
) High forward transfer admittance : |Yfs| = 8 S (typ.
) : IDSS = 10 µA (max) (VDS = 30 V) : Vth = 0.
8~2.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD 2) EAS IAR EAR Tch Tstg Rating 30 30 ±20 6 24 1.
5 W 1.
0 0.
75 W 0.
45 46.
8 6 0.
10 150 −55 150 mJ A mJ Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-6J1E Drain power dissipation Single-devece value (t = 10 s) (Note 2a) at dual operation (Note 3b) Drain power dissipation Single-devece value (t = 10 s) (Note 2b) at dual operation (Note 3b) Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy (Note 2a, Note 3b, Note 5) Channel temperature Storage temperature range Single-device operation (Note 3a) Single-device operation (Note 3a) Weight: 0.
080 g (typ.
) Circuit Configuration Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-05-17 TPC8203 Thermal Characteristics Characteristics Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 83.
3 Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) 125 °C/W 167 Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Single-device value at dual operation (Note 3b) 278 Marking TPC8203 * Type Note 1: Please use devices on condition that the channel te...


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