CES2304
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
30V, 2.
8A, RDS(ON) = 65mΩ (typ) @VGS = 10V.
RDS(ON) = 90mΩ (typ) @VGS = 4.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-23 package.
D
DS G
SOT-23
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS 30
VGS ±20
ID 2.
8 IDM 10
Maximum Power Dissipation
PD 1.
25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 100
Units V V ...