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CES2304

CET
Part Number CES2304
Manufacturer CET
Description N-Channel MOSFET
Published Jun 12, 2018
Detailed Description CES2304 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 2.8A, RDS(ON) = 65mΩ (typ) @VGS = 10V. RDS(ON)...
Datasheet PDF File CES2304 PDF File

CES2304
CES2304

Overview
CES2304 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 2.
8A, RDS(ON) = 65mΩ (typ) @VGS = 10V.
RDS(ON) = 90mΩ (typ) @VGS = 4.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-23 package.
D DS G SOT-23 G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 30 VGS ±20 ID 2.
8 IDM 10 Maximum Power Dissipation PD 1.
25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units V V A A W C Units C/W 2003.
August 7 - 18 http://www.
cetsemi.
com CES2304 Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Curr...


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