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CES2309

Chino-Excel Technology
Part Number CES2309
Manufacturer Chino-Excel Technology
Description P-Channel MOSFET
Published Mar 11, 2011
Detailed Description CES2309 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -2.2A, RDS(ON) = 165mΩ @VGS = -4.5V. RDS(ON) =...
Datasheet PDF File CES2309 PDF File

CES2309
CES2309

Overview
CES2309 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -2.
2A, RDS(ON) = 165mΩ @VGS = -4.
5V.
RDS(ON) = 300mΩ @VGS = -2.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-23 package.
D PRELIMINARY G D G SOT-23 S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -20 Units V V A A W C ±12 -2.
2 -8 1.
25 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units C/W www.
DataSheet4U.
com This is preliminary information on a new product in development now .
Details are subject to change without notice .
7-6 Rev 1.
2006.
April http://www.
cetsemi.
com CES2309 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zer...


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