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CES2302

Chino-Excel Technology
Part Number CES2302
Manufacturer Chino-Excel Technology
Description N-Channel MOSFET
Published Mar 11, 2011
Detailed Description N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 3.0A, RDS(ON) = 72mΩ @VGS = 4.5V. RDS(ON) = 110mΩ @VGS ...
Datasheet PDF File CES2302 PDF File

CES2302
CES2302

Overview
N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 3.
0A, RDS(ON) = 72mΩ @VGS = 4.
5V.
RDS(ON) = 110mΩ @VGS = 2.
5V.
High dense cell design for extremely low RDS(ON).
Lead free product is acquired.
Rugged and reliable.
SOT-23 package.
CES2302 D D G SOT-23 G S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C ±8 3 10 1.
25 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units C/W www.
DataSheet4U.
com Details are subject to change without notice .
1 Rev 2.
2010.
Dec http://www.
cetsemi.
com CES2302 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Re...


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