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CES2307

Chino-Excel Technology
Part Number CES2307
Manufacturer Chino-Excel Technology
Description P-Channel MOSFET
Published Mar 11, 2011
Detailed Description P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.2A, RDS(ON) = 78mΩ @VGS = -10V. RDS(ON) = 120mΩ @VG...
Datasheet PDF File CES2307 PDF File

CES2307
CES2307

Overview
P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.
2A, RDS(ON) = 78mΩ @VGS = -10V.
RDS(ON) = 120mΩ @VGS = -4.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-23 package.
CES2307 D D G SOT-23 G S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -30 Units V V A A W C ±20 -3.
2 -12 1.
25 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units C/W www.
DataSheet4U.
com Details are subject to change without notice .
1 Rev 2 2010.
May http://www.
cetsemi.
com CES2307 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -0.
75A VDS = -15V, ID = -3.
2A, VGS = -10V Test Condition VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -3.
2A VGS = -4.
5V, ID = -2.
5A VDS = -10V, ID = -3.
2A VDS = -15V, VGS = 0V, f = 1.
0 MHz -1 60 95 5 640 130 95 11 5 30 7 9.
5 3.
4 1.
7 -3.
2 -1.
2 22 10 60 14 12.
5 Min -30 -1 100 -100 -3 78 120 Typ Max Units V µA nA nA V mΩ mΩ S ...


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