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CES2306

CET
Part Number CES2306
Manufacturer CET
Description N-Channel MOSFET
Published Sep 29, 2015
Detailed Description CES2306 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 3.6A, RDS(ON) = 60mΩ @VGS = 4.5V. RDS(ON) = 70...
Datasheet PDF File CES2306 PDF File

CES2306
CES2306

Overview
CES2306 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 3.
6A, RDS(ON) = 60mΩ @VGS = 4.
5V.
RDS(ON) = 70mΩ @VGS = 2.
5V.
RDS(ON) = 100mΩ @VGS = 1.
8V.
High dense cell design for extremely low RDS(ON).
Lead-free plating ; RoHS compliant.
Rugged and reliable.
SOT-23 package.
DS G SOT-23 G D S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 20 VGS ±8 Drain Current-Continuous Drain Current-Pulsed a ID 3.
6 IDM 14 Maximum Power Dissipation PD 1.
25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units V V A A W C Units C/W Details are subject to change without notice 1 Rev 2.
2011.
Nov http://www.
cet-mos.
com CES2306 Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Vo...


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