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CES2305

Chino-Excel Technology
Part Number CES2305
Manufacturer Chino-Excel Technology
Description P-Channel MOSFET
Published Mar 11, 2011
Detailed Description CES2305 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4A, RDS(ON) = 55mΩ @VGS = -10V. RDS(ON) = 70m...
Datasheet PDF File CES2305 PDF File

CES2305
CES2305

Overview
CES2305 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4A, RDS(ON) = 55mΩ @VGS = -10V.
RDS(ON) = 70mΩ @VGS = -4.
5V.
RDS(ON) = 120mΩ @VGS = -2.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-23 package.
G D G SOT-23 S PRELIMINARY D S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -30 Units V V A A W C ±12 -4 -15 1.
25 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units C/W www.
DataSheet4U.
com This is preliminary information on a new product in development now .
Details are subject to change without notice .
1 Rev 1.
2006.
April http://www.
cetsemi.
com CES2305 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -1A VDS = -15V, ID = -4A, VGS = -4.
5V VDD = -15V, ID= -4A, VGS = -10V, RGEN = 6Ω 9 4 42 5 8.
4 2.
4 1.
5 -4 -1 20 10 85 10 11 ns ns ns ns nC nC nC A V VGS(th) RDS(on) VGS = VDS, ID = -250µA VGS = -10V, ID = -4A VGS = -4.
5V, ID = -3.
5A VGS = -2.
5V, ID = -1A gFS Ciss Coss Crss VDS = -10V, ID = -4A VDS = -15V, VGS = 0V, f = 1.
0 MHz -0.
7 42 53 85 5 900 155 205 -1.
3 55 70 120 V mΩ mΩ mΩ S pF pF pF BVD...


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