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CES2303

Chino-Excel Technology
Part Number CES2303
Manufacturer Chino-Excel Technology
Description P-Channel MOSFET
Published Mar 11, 2011
Detailed Description CES2303 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -1.9A, RDS(ON) = 150mΩ (typ) @VGS = -10V. RDS(...
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CES2303
CES2303

Overview
CES2303 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -1.
9A, RDS(ON) = 150mΩ (typ) @VGS = -10V.
RDS(ON) = 230mΩ (typ) @VGS = -4.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-23 package.
D G D G SOT-23 S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -30 Units V V A A W C ±20 -1.
9 -10 1.
25 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units C/W www.
DataSheet4U.
com 2004.
May 7 - 14 http://www.
cetsemi.
com CES2303 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gat...


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