Silicon P-Channel MOSFET
2SJ530(L),2SJ530(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-655B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.08 Ω typ. • 4V gate drive devices. • High speed switching. Outline DPAK–2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ530(L),2SJ530(S) Absolute Maximum Ratings (Ta = 25°C) Item Dr...
Hitachi Semiconductor