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2SJ530S

Hitachi Semiconductor
Part Number 2SJ530S
Manufacturer Hitachi Semiconductor
Description Silicon P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ530(L),2SJ530(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-655B (Z) 3rd. Edition Jun 1998 Feature...
Datasheet PDF File 2SJ530S PDF File

2SJ530S
2SJ530S

Overview
2SJ530(L),2SJ530(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-655B (Z) 3rd.
Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.
08 Ω typ.
• 4V gate drive devices.
• High speed switching.
Outline DPAK–2 4 D 4 1 2 G 3 1 2 S 3 1.
Gate 2.
Drain 3.
Source 4.
Drain 2SJ530(L),2SJ530(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –15 –60 –15 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –15 19 30 150 –55 to +150 EAR Pch Tch Tstg 1.
PW ≤ 10µs, duty cycle ≤ 1 % 2.
Value at Tc = 25° C 3.
Value at Tch = 25° C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source le...


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