Part Number
|
2SJ530S |
Manufacturer
|
Hitachi Semiconductor |
Description
|
Silicon P-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
2SJ530(L),2SJ530(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-655B (Z) 3rd. Edition Jun 1998 Feature...
|
Datasheet
|
2SJ530S
|
Overview
2SJ530(L),2SJ530(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-655B (Z) 3rd.
Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.
08 Ω typ.
• 4V gate drive devices.
• High speed switching.
Outline
DPAK–2
4 D
4
1 2 G
3
1 2 S
3
1.
Gate 2.
Drain 3.
Source 4.
Drain
2SJ530(L),2SJ530(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings –60 ±20 –15 –60 –15
Unit V V A A A A mJ W °C °C
Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP
Note3 Note3 Note...
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