SI2302DS
N-channel enhancement mode field-effect
transistor
Rev.
02 — 20 November 2001
M3D088
Product data
1.
Description
N-channel enhancement mode field-effect
transistor in a plastic package using TrenchMOS™1 technology.
Product availability: SI2302DS in SOT23.
2.
Features
s s s s TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package.
3.
Applications
s Battery management s High speed switch s Low power DC to DC converter.
4.
Pinning information
Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g)
3
Simplified outline
Symbol
source (s) drain (d)
g 1 Top view 2
MSB003 MBB076
d
s
SOT23
1.
TrenchMOS is a ...