DatasheetsPDF.com

PTF10120

Part Number PTF10120
Manufacturer Ericsson
Description 120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor
Published Apr 16, 2005
Detailed Description PTF 10120 120 Watts, 1.8–2.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10120 is an internally matched com...
Datasheet PTF10120





Overview
PTF 10120 120 Watts, 1.
8–2.
0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.
8 to 2.
0 GHz.
It is rated at 120 watts power output.
Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
• • INTERNALLY MATCHED Guaranteed Performance at 1.
99 GHz, 28 V - Output Power = 120 Watts Min - Power Gain = 11 dB Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability • • • • • Typical Output Power vs.
Input Power 150 100 Output Power (Wat...






Similar Datasheet



Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)