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PTF10119

Ericsson
Part Number PTF10119
Manufacturer Ericsson
Description 12 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor
Published Apr 16, 2005
Detailed Description PTF 10119 12 Watts, 2.1–2.2 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10119 is an internally matched, com...
Datasheet PDF File PTF10119 PDF File

PTF10119
PTF10119

Overview
PTF 10119 12 Watts, 2.
1–2.
2 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10119 is an internally matched, common source, N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.
1 to 2.
2 GHz.
It is rated at 12 watts power output.
Nitride surface passivation and gold metallization ensure excellent device reliability.
• • • • • • • INTERNALLY MATCHED Performance at 2.
17 GHz, 28 Volts - Output Power = 12 Watts Min - Power Gain = 11 dB Typ - Efficiency = 43% Typ @ P-1dB Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% lot traceability Typical Output Power vs.
Input Power 20 Output Power (Watts) 16 12 8 4 0 0 0.
2 0.
4 0.
6 0.
8 1 1.
2 A-12 1011 9 3456 0053 VDD = 28 V IDQ = 160 mA f = 2170 MHz Input Power (Watts) Package 20222 Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) Symbol VDSS VGS TJ PD TSTG RqJC Value 65 ±20 200 55 0.
31 –40 to +150 3.
2 Unit Vdc Vdc °C Watts W/°C °C °C/W e 1 PTF 10119 Electrical Characteristics Characteristic (100% Tested) e Conditions Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 — 3.
0 — Typ — — — 0.
8 Max — 1.
0 5.
0 — Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 50 mA Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance VDS = 26 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 2 A RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 3 W, IDQ = 160 mA, f = 2.
11, 2.
17 GHz) Power Output at 1 dB Compressed (VDD = 28 V, IDQ = 160 mA, f = 2.
17 GHz) Drain Efficiency (VDD = 28 V, POUT = 12 W, IDQ = 160 mA, f = 2.
17 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 12 W, IDQ = 160 mA, f = 2.
17 GHz —all phase angles at frequency of test) Symbol Gps p-1dB hD Y Min 10 12 30 — Typ 11 14 43 — Max — —...


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